Via structure with low resistivity and method for forming the same

ABSTRACT

A semiconductor device structure is provided. The semiconductor device structure includes a conductive gate stack formed over a substrate. A first gate spacer is formed adjacent to a sidewall of the conductive gate stack. A source/drain contact structure is formed adjacent to the first gate spacer. An insulating capping layer covers and is in direct contact with an upper surface of the conductive gate stack. A top width of the insulating capping layer is substantially equal to a top width of the conductive gate stack. The insulating capping layer is separated from the source/drain contact structure by the first gate spacer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a Continuation of pending U.S. patent application Ser. No. 16/907,781, filed Jun. 22, 2020, which is a Continuation of U.S. patent application Ser. No. 16/163,970, filed Oct. 18, 2018 (now U.S. Pat. No. 10,693,004 issued on Jun. 23, 2020), which claims the benefit of U.S. Provisional Application No. 62/718,808, filed on Aug. 14, 2018, the entirety of which is incorporated by reference herein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. As the semiconductor industry has progressed into nanometer technology process nodes in pursuit of higher device density, higher performance, and lower costs, challenges from both fabrication and design issues have resulted in the development of three-dimensional designs, such as the fin field effect transistor (FinFET).

FinFETs are fabricated with a thin vertical “fin” (or fin structure) extending from a substrate. The channel of the FinFET is formed in this vertical fin. A gate is provided over three sides (e.g., wrapping) the fin. Advantages of the FinFET may include reducing the short channel effect and raising the current flow.

However, although existing FinFET manufacturing processes have generally been adequate for their intended purposes, as device scaling-down continues, they have not been entirely satisfactory in all respects. For example, it is a challenge to form reliable via and contact structures at smaller and smaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIGS. 1A to 1D illustrate perspective views of various stages of manufacturing a semiconductor device structure in accordance with some embodiments.

FIGS. 2A to 2M illustrate cross-sectional representations of various stages of manufacturing the semiconductor device structure in accordance with some embodiments.

FIG. 3 illustrates a cross-sectional representation of a semiconductor device structure in accordance with some embodiments.

FIG. 4 illustrates a cross-sectional representation of a semiconductor device structure in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that additional operations can be provided before, during, and after the method, and some of the operations described can be replaced or eliminated for other embodiments of the method.

Embodiments for manufacturing semiconductor device structures are provided. The semiconductor device structures may include an insulating capping layer formed over a gate stack over a substrate, and a self-aligned contact structure formed over a source/drain structure adjacent to and protruding above the gate stack. A first via structure may be formed over and electrically connected to the gate stack. A second via structure may be formed over and electrically connected to the self-aligned contact structure without recessing the self-aligned contact structure and forming a capping layer over the self-aligned contact structure. As a result, the processes for manufacturing the semiconductor device structure may be simplified, and the resistances of the self-aligned contact structure and the overlying second via structure may be reduced.

FIGS. 1A to 1D illustrate perspective views of various stages of manufacturing a semiconductor device structure and FIGS. 2A to 2M illustrate cross-sectional representations of various stages of manufacturing the semiconductor device structure in accordance with some embodiments. In addition, FIGS. 2A to 2D illustrate the cross-sectional representations of the semiconductor device structure shown along line 2-2′ in FIGS. 1A to 1D in accordance with some embodiments. In some embodiments, the semiconductor device structure is implemented as a fin field effect transistor (FinFET) structure. As show in FIGS. 1A and 2A, a substrate 100 is provided. In some embodiments, the substrate 100 is a semiconductor substrate, such as a bulk semiconductor, a semiconductor-on-insulator (SOI) substrate, or the like, which may be doped (e.g. with a P-type or an N-type dopant) or undoped. In some embodiments, the substrate 100 is a wafer, such as a silicon wafer. Generally, an SOI substrate includes a layer of a semiconductor material formed on an insulator layer. The insulator layer may be, for example, a buried oxide (BOX) layer, a silicon oxide layer, or the like. The insulator layer is provided on a substrate, typically a silicon or glass substrate.

Other substrates, such as a multi-layered or gradient substrate may also be used. In some embodiments, the semiconductor material of the substrate 100 includes silicon; germanium; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or a combination thereof. In some embodiments, the substrate 100 includes silicon. In some embodiments, the substrate 100 includes an epitaxial layer. For example, the substrate 100 has an epitaxial layer overlying a bulk semiconductor.

In some embodiments, the substrate 100 has a PMOS region for P-type FinFETs formed thereon and/or an NMOS region for N-type FinFETs formed thereon. In some embodiments, the PMOS region of the substrate 100 includes Si, SiGe, SiGeB, or an III-V group semiconductor material (such as InSb, GaSb, or InGaSb). The NMOS region of the substrate 100 includes Si, SiP, SiC, SiPC, or an III-V group semiconductor material (such as InP, GaAs, AlAs, InAs, InAlAs, or InGaAs).

Afterwards, a fin structure 102 is formed over a substrate 100 in accordance with some embodiments. In some embodiments, the fin structure 102 is formed by patterning the substrate 100. The fin structure 102 may have slope sidewalls, so that the fin structure 102 has a top portion with a width that is narrower than that of the bottom portion, as shown in FIG. 1A.

After the fin structure 102 is formed, an isolation feature 104, such as an shallow trench isolation (STI) structure, is formed over the substrate 100, as shown in FIG. 1A in accordance with some embodiments. The fin structure 102 is surrounded by the isolation feature 104. The isolation feature 104 may be formed by depositing an insulating layer over the substrate 100 and recessing the insulating layer. In some embodiments, the isolation feature 104 is made of silicon oxide, silicon nitride, silicon oxynitride, fluorosilicate glass (FSG), low-K dielectric materials, and/or another suitable dielectric material. The insulating liner for formation of the isolation feature 104 may be deposited by a flowable CVD (FCVD) process, a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or another applicable process.

Next, dummy gate structures 109 a, 109 b, 109 c, and 109 d are formed across the fin structure 102 over the substrate 100 and cover the isolation feature 104, as shown in FIG. 1A in accordance with some embodiments. In some embodiments, each of the dummy gate structures 109 a, 109 b, 109 c, and 109 d include a dummy gate dielectric layer 108 and a dummy gate electrode layer 110 formed over the dummy gate dielectric layer 108. In some embodiments, the dummy gate dielectric layer 108 is made of silicon oxide. In some embodiments, the dummy gate electrode layer 110 is made of polysilicon.

After the dummy gate structures 109 a, 109 b, 109 c, and 109 d are formed, gate spacers are formed on the opposite sides (e.g., sidewalls) of the dummy gate structures 109 a, 109 b, 109 c, and 109 d. Each of the gate spacers includes a first spacer layer 120 adjacent to the corresponding dummy gate structure and a second spacer layer 122 adjacent to the first spacer layer 120, as shown in FIGS. 1A and 2A in accordance with some embodiments. The first spacer layer 120 may be used for protecting dummy gate structure 109 a, 109 b, 109 c, and 109 d from damage or loss during subsequent processing. In some embodiments, the first spacer layers 120 are made of low-K dielectric materials, silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, or another applicable dielectric material. The first spacer layer 120 may include a single layer or multiple layers.

The second spacer layer 122 is formed on the corresponding first spacer layer 120 in accordance with some embodiments. In some embodiments, the second spacer layer 122 is made of a material that is different from that of the first spacer layer 120, and includes silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, or another applicable material.

After formation of the gate spacers, source/drain features 124 are formed in the fin structure 104 adjacent to and exposed from the dummy gate structures 109 a, 109 b, 109 c, and 109 d, as shown in FIGS. 1A and 2A in accordance with some embodiments. In some embodiments, the source/drain structures 114 is formed by recessing the fin structure 102 exposed from the dummy gate structures 109 a, 109 b, 109 c, and 109 d and growing semiconductor materials in the formed recesses in the fin structure 102 by performing epitaxial (epi) growth processes. In some embodiments, the semiconductor device structure is an NMOS device, and the source/drain feature 124 includes Si, SiP, SiC, SiPC, or an III-V group semiconductor material (such as InP, GaAs, AlAs, InAs, InAlAs, or InGaAs), or the like. In some embodiments, the semiconductor device structure is a PMOS device, and the source/drain feature 124 includes Si, SiGe, SiGeB, or an III-V group semiconductor material (such as InSb, GaSb, or InGaSb), or the like. In some embodiments, the source/drain features 124 protrude above the isolation feature 104.

After the source/drain features 124 are formed, an insulating layer 126 is formed over the isolation feature 104 and covers the source/drain features 124 and the isolation feature 104, as shown in FIGS. 1B and 2B in accordance with some embodiments. The insulating layer 126 (which serves as an interlayer dielectric (ILD) layer) may be made of silicon oxide, tetraethyl orthosilicate (TEOS), phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate Glass (BPSG), fluorosilicate glass (FSG), undoped silicate glass (USG), or the like, and may be deposited by any suitable method, such as a chemical vapor deposition (CVD) process, a plasma enhanced CVD (PECVD) process, flowable CVD (FCVD) process, the like, or a combination thereof. The insulating layer 126 may be a single layer or include multiple dielectric layers with the same or different dielectric materials.

Afterwards, the dummy gate structures 109 a, 109 b, 109 c, and 109 d are removed, so as to be replaced by gate structures 137 a, 137 b, 137 c, and 137 d, as shown in FIGS. 1B and 2B in accordance with some embodiments. In some embodiments, each of the gate structures 137 a, 137 b, 137 c, and 137 d includes a gate dielectric layer 130, a gate electrode layer 132, and gate spacers including the first spacer layer 120 and the second spacer layer 122. In some embodiments, the gate dielectric layer 130 is made of high-K dielectric materials, such as metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, or oxynitrides of metals. Examples of the high-K dielectric material include, but are not limited to, hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), zirconium oxide, titanium oxide, aluminum oxide, or another applicable dielectric material.

In some embodiments, the gate electrode layer 132 is made of a conductive material, such as aluminum, copper, tungsten, titanium, tantalum, or another applicable material. Each of the gate structures 137 a, 137 b, 137 c, and 137 d may further include a work functional metal layer (not shown) between the gate dielectric layer 130 and the gate electrode layer 132, so that the gate structures 137 a, 137 b, 137 c, and 137 d have the proper work function values. An exemplary p-type work function metal layer may be made of TiN, TaN, Ru, Mo, Al, WN, ZrSi₂, MoSi₂, TaSi₂, NiSi₂, WN, or a combination thereof. An exemplary n-type work function metal layer may be made of Ti, Ag, TaAl, TaAlC, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, or a combination thereof.

Afterwards, the gate structures 137 a, 137 b, 137 c, and 137 d are recessed by etching, so as to form recesses 136, as shown in FIGS. 1C and 2C in accordance with some embodiments. During the etching, top portions of the gate dielectric layers 130, the gate spacers (i.e., the first spacer layers 120, and second spacer layers 122) are also recessed, so that upper sidewalls of the insulating layer 126 are exposed by the recesses 136 in accordance with some embodiments.

In some embodiments, each of the gate electrode layers 122 is further recessed by etching after the upper sidewalls of the insulating layer 126 are exposed, so that the recesses 136 are extended and the upper surface 131 a of each gate spacer is higher than the upper surface of the corresponding gate electrode layer 122, as shown in FIGS. 1C and 2C in accordance with some embodiments.

Afterwards, a conductive capping layer 138 is formed to cover each of the recessed gate electrode layers 122 in FIGS. 1C and 2C in accordance with some embodiments. The conductive capping layers 138 and the underlying gate electrode layers 122 form gate stacks of the gate structures 137 a, 137 b, 137 c, and 137 d. In some embodiments, the upper surface 131 a of each gate spacer is substantially level with the upper surface 131 b of each gate stack. In some embodiments, the conductive capping layers 138 serve as etch stop layers or protective layers for protecting the gate electrode layers 122 from damage or loss during subsequent processing, and are made of a metal material, such as tungsten or fluorine-free tungsten.

After the conductive capping layers 138 are formed, a gate cut process is performed to remove one or more gate stacks of the gate structures 137 a, 137 b, 137 c, and 137 d in accordance with some embodiments. In some embodiments, the gate stack of the gate structure 137 c is removed by etching during the gate cut process, as shown in FIGS. 1C and 2C. Afterwards, an insulating material 133 fills the space that is formed by the removal of the gate stack of the gate structure 137 c to form an insulating gate-cut structure 137 c′. The insulating gate-cut structure 137 c′ includes the gate dielectric layer 130, the insulating material 133, and gate spacers including the first spacer layers 120 and the second spacer layers 122.

In some embodiments, the insulating material 133 includes silicon nitride, silicon oxynitride, or silicon carbon nitride, a high-K dielectric material, or the like. Examples of high-K dielectric materials include hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), zirconium oxide, titanium oxide, aluminum oxide, and other applicable dielectric materials. In some embodiments, the insulating gate-cut structure 137 c′ is formed by a chemical vapor deposition (CVD) process, a physical vapor deposition, (PVD) process, or another applicable process.

After the gate cut process is performed, insulating capping layers 150 a, 150 b, 150 d, and 150 c are respectively formed in the recesses 136 (not shown and as indicated in FIGS. 1C and 2C) over the gate structures 137 a, 137 b, and 137 d, and the insulating gate-cut structure 137 c′, as shown in FIGS. 1D and 2D in accordance with some embodiments. The insulating capping layers 150 a, 150 b, and 150 d may protect the gate structures 137 a, 137 b, and 137 d in the subsequent manufacturing processes (e.g., etching processes).

In some embodiments, the insulating capping layers 150 a, 150 b, 150 c, and 150 d are made of SiON, Ta₂O₅, Al₂O₃, or ZrO₂. In some other embodiments, the insulating capping layers 150 a, 150 b, 150 c, and 150 d are made of Al-containing oxide, N-containing oxide, Hf-containing oxide, Ta-containing oxide, Ti-containing oxide, Zr-containing oxide, La-containing oxide, or another metal-containing oxide or high-K (e.g., K>5) dielectric material.

In some embodiments, lower surfaces 131 c of the insulating capping layers 150 a, 150 b, 150 c, and 15 d are substantially level with the upper surfaces 131 a (not shown and as indicated in FIGS. 1C and 2C) of the corresponding gate spacers including the first spacer layers 120 and the second spacer layers 122.

After the insulating capping layers 150 a, 150 b, 150 c, and 150 d are formed, a masking layer 152 is formed over the insulating layer 126 and the insulating capping layers 150 a, 150 b, 150 c, and 150 d, as shown in FIG. 2E in accordance with some embodiments. In some embodiments, the masking layer 152 includes a tri-layer resist structure including a bottom layer, a middle layer, and a top layer. In order to simplify the diagram, only a flat layer (i.e., the masking layer 152) is depicted.

More specifically, the bottom layer is a first layer of the tri-layer resist structure. The bottom layer may contain a material that is patternable and/or have anti-reflection properties. In some embodiments, the bottom layer is a bottom anti-reflective coating (BARC) layer, such as a nitrogen-free anti-reflective coating (NFARC) layer. In some embodiments, the bottom layer 118 is formed by a spin-on coating process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, or another suitable deposition process.

The middle layer is formed over the bottom layer and is a second layer of the tri-layer resist structure. The middle layer (which is also referred to as a hard mask layer) provides hard mask properties for the photolithography process. In addition, the middle layer is designed to provide etching selectivity from the bottom layer and the top layer. In some embodiments, the middle layer is made of silicon nitride, silicon oxynitride or silicon oxide and is formed by a spin-on coating process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, or another suitable deposition process.

The top layer is formed over the middle layer and is a third layer of the tri-layer resist structure. The top layer may be positive photoresist or negative photoresist. In some other embodiments, the tri-layer resist structure includes oxide-nitride-oxide (ONO) layers.

Afterwards, the tri-layer resist structure (i.e., the masking layer 152) is patterned to form a self-aligned opening 154 which is formed through the masking layer 152 and the insulating layer 126 to expose the upper surfaces of some source/drain features 124, as shown in FIG. 2F in accordance with some embodiments. In some embodiments, the self-aligned opening 154 is formed by etching the masking layer 152 and the insulating layer 126 using the insulating capping layers 150 a, 150 b, and 150 c as etch masks, so as to define some source/drain contact regions between the gate structures. For example, the source/drain contact regions are between gate structures 137 a and 137 b and between gate structure 137 b and the insulating gate-cut structure 137 c′. Although some portions of the insulating capping layers 150 a, 150 b, and 150 c may also be removed during the etching for formation of the self-aligned opening 154, the gate structures 137 a and 137 b and the insulating gate-cut structure 137 c′ are still protected by the insulating capping layers 150 a, 150 b, and 150 c. The source/drain contact regions defined by the self-aligned opening 154 provide a maximum critical dimension (CD) compared to cases where the source/drain contact regions are defined by a non-self-aligned opening. As a result, the resistance (e.g., contact resistance) of the subsequently formed contact structure in those source/drain contact regions defined by the self-aligned opening 154 can be reduced.

After the self-aligned opening 154 is formed, a salicide process may be performed to form salicide layers (not shown) over the exposed upper surfaces of the source/drain features 124. In some embodiments, the salicide layers may be formed by forming a metal layer over the upper surfaces of the source/drain features 124.

Afterwards, an annealing process is performed on the metal layer so the metal layer reacts with the source/drain features 124. Afterwards, the unreacted metal layer is removed to form the salicide layers. Examples for forming the metal layer includes Ti, Co, Ni, NiCo, Pt, Ni(Pt), Ir, Pt(Ir), Er, Yb, Pd, Rh, Nb, TiSiN, and the like.

After the self-aligned opening 154 and the salicide layers (if presented) are formed, a conductive material 156 is formed over the masking layer 152 and fills the self-aligned opening 154, as shown in FIG. 2G in accordance with some embodiments. In some embodiments, the conductive material 156 is made of Ru, Ni, Rh, Al, Mo, W, Co, Cu, or metal compound, or the like. The conductive material 156 may be formed by a chemical vapor deposition (CVD) process, a physical vapor deposition, (PVD) process, an atomic layer deposition (ALD) process, an electroless deposition (ELD) process, an electrochemical plating (ECP) process, or another applicable process.

After the conductive material 156 is formed, a polishing process is performed to remove the excess conductive material 156 above the insulating capping layers 150 a, 150 b, 150 c, and 150 d and the masking layer 150, as shown in FIG. 2H in accordance with some embodiments. In some embodiments, a polishing process is performed on the conductive material 156 until the insulating capping layers 150 a, 150 b, 150 c, and 150 d are exposed. In some embodiments, the polishing process includes a chemical mechanical polishing (CMP) process.

After the polishing process, the remaining conductive material 156 forms a contact structure 158 a between and adjacent to the gate structures 137 a and 137 b and 158 b, and a contact structure 158 b between and adjacent to the gate structure 137 b and the insulating gate-cut structure 137 c′, as shown in FIG. 2H. Those contact structures 158 a and 158 b are electrically connected to the corresponding source/drain features 124 and therefore they are also referred to as self-aligned source/drain contact structures or self-aligned source/drain electrodes. The upper surface 161 a of the contact structure 158 a and the upper surface 161 b of the contact structure 158 b are substantially level with the upper surface 151 a of the insulating capping layer 150 a, the upper surface 151 b of the insulating capping layer 150 b, the upper surface 151 c of the insulating capping layer 150 c, and the upper surface 151 d of the insulating capping layer 150 d. As a result, the contact structures 158 a and 158 b protrude above the gate structures 137 a, 137 b, and 137 d, and the insulating gate-cut structure 137 c′. As described previously, the self-aligned opening 154 provides a maximum critical dimension (CD), the resistance (e.g., contact resistance) of the self-aligned source/drain contact structures 158 a and 158 b can be reduced.

After the contact structures 158 a and 158 b are formed, insulating layers 160 and 162 are successively formed over the insulating layer 126 and cover the insulating capping layers 150 a, 150 b, and 150 d, and the insulating gate-cut structure 137 c′, as shown in FIG. 2I in accordance with some embodiments. In some embodiments, the insulating layer 160 serves as an etch stop layer and is made of SiN, SiCN, SiOC, SiON, SiCN, or SiOCN. The insulating layer 160 may be formed by performing a chemical vapor deposition (CVD) process, a plasma enhanced CVD (PECVD) process, low pressure CVD (LPCVD) process, an atomic layer deposition (ALD) process, or another applicable processes.

In some embodiments, the insulating layer 162 includes a single layer or multilayers and is made of SiO₂, SiOC, ZrO₂, HfO₂, or another applicable dielectric material, or a combination thereof. The insulating layer 162 serves as an interlayer dielectric (ILD) layer and is made of silicon oxide, tetraethyl orthosilicate (TEOS), phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate Glass (BPSG), fluorosilicate glass (FSG), undoped silicate glass (USG), or the like. The insulating layer 160 may be formed by performing by any suitable deposition method, such as a chemical vapor deposition (CVD) process, a plasma enhanced CVD (PECVD) process, flowable CVD (FCVD) process, physical vapor deposition, (PVD), atomic layer deposition (ALD), spin-on coating, the like, or a combination thereof.

After the insulating layer 162 is formed, a via opening 164 a that passes through the insulating layer 162, the insulating layer 160, and the insulating capping layer 150 a is formed, so as to expose the upper surface 131 b (not shown and as indicated in FIG. 2C) of the gate stack in the gate structure 137 a, as shown in FIG. 2J in accordance with some embodiments. In some embodiments, the via opening 164 a corresponding to the gate structure 137 a is formed by performing photolithography and etching processes. For example, an etching process may be performed using the insulating layer 162 as an etch stop layer after the photolithography process, so that an opening through the insulating layer 162 is formed and the insulating layer 160 is exposed. Afterwards, one or more etching processes may be performed to etch the insulating layer 160 and the insulating capping layer 150 a, so as to expose the upper surface of the gate structure 137 a (e.g., the upper surface of the conductive capping layer 138 in the gate structure 137 a).

After the via opening 164 a is formed, a via opening 164 b and a via trench opening 164 c that pass through the insulating layer 162 and the insulating layer 160 are formed, as shown in FIG. 2K in accordance with some embodiments. In some embodiments, the upper surface 161 a (not shown and as indicated in FIG. 2H) of the contact structure 158 a is exposed through the via opening 164 b. Moreover, the upper surface 161 b (not shown and as indicated in FIG. 2H) of the contact structure 158 b, the upper surface 151 c (not shown and as indicated in FIG. 2H) of the insulating capping layer 150 c, and the upper surface 151 d (not shown and as indicated in FIG. 2H) of the insulating capping layer 150 d are exposed through the via trench opening 164 c.

Similarly, the via opening 164 b and a via trench opening 164 c respectively corresponding to the contact structures 158 a and 158 b are formed by performing photolithography and etching processes. For example, an etching process may be performed using the insulating layer 162 as an etch stop layer after the photolithography process, so that openings through the insulating layer 162 are formed and the insulating layer 160 is exposed. Afterwards, another etching process may be performed through the openings to etch the insulating layer 160 until the contact structures 158 a and 158 b are exposed.

The formed via opening 164 a has a depth D1 and the formed via opening 164 b and the formed via trench opening 164 c have a depth D2 that is different from the depth D1. In some embodiments, the depth D1 of the via opening 164 a is greater than the depths D2 of the via opening 164 b and the via trench opening 164 c, as shown in FIG. 2K in accordance with some embodiments. As a result, the subsequently formed via structures have different vertical heights.

Although the via opening 164 a is formed prior to formation of the via opening 164 b and the via trench opening 164 c, the via opening 164 b and the via trench opening 164 c may be formed prior to formation of the via opening 164 a, in accordance some embodiments.

In addition, although the via opening 164 b and the via trench opening 164 c are formed simultaneously by the same photolithography and etching processes, the via opening 164 b and the via trench opening 164 c may be formed by respective photolithography and etching processes, in accordance some embodiments. In those cases, the via opening 164 b may be formed before or after the via trench opening 164 c is formed.

After the via opening 164 b, the via opening 164 a, and the via trench opening 164 c are formed, a conductive material 170 is formed over the insulating layer 162 and fills the via openings 164 a and 164 b, and the via trench opening 164 c, as shown in FIG. 2L in accordance with some embodiments. In some embodiments, the conductive material 170 is made of Ru, Ni, Rh, Al, Mo, W, Co, Cu, or metal compound, or the like.

The conductive material 170 may be formed by a chemical vapor deposition (CVD) process, a physical vapor deposition, (PVD) process, an atomic layer deposition (ALD) process, an electroless deposition (ELD) process, an electrochemical plating (ECP) process, or another applicable process.

After the conductive material 170 is formed, a polishing process is performed on the conductive material 170 until the upper surface of the insulating layer 162 is exposed, as shown in FIG. 2M in accordance with some embodiments. In some embodiments, the polishing process includes a chemical mechanical polishing (CMP) process. After the polishing process, the remaining conductive material 170 in the via openings 164 a and 164 b, and the via trench opening 164 c forms conductive via structures 172 a, 172 b, and 172 c. As a result, the semiconductor device structure 10 a having the gate structures 137 a, 137 b, and 137 c, the contact structures 158 a and 158 b, and the via structures 172 a, 172 b, and 172 c is formed.

In some embodiments, the via structure 172 a in and surrounded by the insulating layers 160 and 162, and the insulating capping layer 150 a has a vertical height H1 and is electrically connected to the gate structure 137 a via the conductive capping layer 138 that is formed between the gate electrode layer 132 and the via structure 172 a, in accordance with some embodiments.

In some embodiments, the via structure 172 b and the via structure 172 c in and surrounded by the insulating layers 160 and 162 are respectively and electrically connected to the contact structures 158 a and 158 b, and have a vertical height H2, in accordance with some embodiments. Moreover, the via structure 172 c is overlapped with the contact structure 158 b, the gate structures 137 b and 137 d, and the insulating gate-cut structure 137 c′, in accordance with some embodiments.

In some embodiments, the via structures 172 a, 172 b, and 172 c have upper surfaces that are substantially level with the upper surface of the insulating layer 162, as shown in FIG. 2M. Since the contact structures 158 a and 158 b protrude above the gate structures 137 a, 137 b, and 137 d, the via structure 172 a with the vertical height H1 is vertically longer than the via structures 172 b and 172 c with the vertical height H2. Accordingly, compared to cases where the upper surface of the contact structures is level with that of the gate structure, the resistance (e.g., the contact resistance) of the via structures 172 b and 172 c above the contact structures 158 a and 158 b, respectively, can be reduced.

Many variations and/or modifications can be made to embodiments of the disclosure. For example, FIG. 2M shows that the lower surfaces of the insulating capping layers 150 a, 150 b, 150 c, and 150 d are substantially level with the upper surfaces of the corresponding gate spacers in the semiconductor device structure 10 a, but embodiments of the disclosure are not limited. The upper surfaces of the corresponding gate spacers may not be substantially level with the upper surfaces of the insulating capping layers 150 a, 150 b, 150 c, and 150 d. FIG. 3 shows a cross-sectional representation of a semiconductor device structure 10 b, in accordance with some embodiments. The semiconductor device structure 10 b shown in FIG. 3 is similar to the semiconductor device structure 10 a shown in FIG. 2M. In some embodiments, the materials, formation methods, and/or benefits of the semiconductor device structure 10 a shown in FIGS. 2A to 2M can also be applied in the embodiments illustrated in FIG. 3, and are therefore not repeated.

Unlike the semiconductor device structure 10 a shown in FIG. 2M, the semiconductor device structure 10 b shown in FIG. 3 has insulating capping layers 150 a′, 150 b′, 150 c′, and 150 d′ that have a T-shaped profile, in accordance with some embodiments. More specifically, gate spacers including a first spacer layer 120 and a second spacer layer 122 are formed on opposite sides of the corresponding gate stacks and protrude above the upper surface of the corresponding conductive capping layer 138 or the insulating material 133, so that the subsequently formed insulating capping layers 150 a′, 150 b′, 150 c′, and 150 d′ have a T-shaped profile, and the upper surfaces of the gate spacers are covered by the corresponding insulating capping layers 150 a′, 150 b′, 150 c′, and 150 d′.

Many variations and/or modifications can be made to embodiments of the disclosure. For example, FIG. 2M shows that the lower surfaces of the insulating capping layers 150 a, 150 b, 150 c, and 150 d are substantially level with the upper surfaces of the corresponding gate spacers in the semiconductor device structure 10 a, but embodiments of the disclosure are not limited. The upper surfaces of the corresponding gate spacers may not be substantially level with the upper surfaces of the insulating capping layers 150 a, 150 b, 150 c, and 150 d. FIG. 4 shows a cross-sectional representation of a semiconductor device structure 10 c, in accordance with some embodiments. The semiconductor device structure 10 b shown in FIG. 4 is similar to the semiconductor device structure 10 a shown in FIG. 2M. In some embodiments, the materials, formation methods, and/or benefits of the semiconductor device structure 10 a shown in FIGS. 2A to 2M can also be applied in the embodiments illustrated in FIG. 4, and are therefore not repeated.

Unlike the semiconductor device structure 10 a shown in FIG. 2M, the semiconductor device structure 10 c shown in FIG. 4 has insulating capping layers 150 a″, 150 b″, 150 c″, and 150 d″ and opposite sides of the insulating capping layers 150 a″, 150 b″, 150 c″, and 150 d″ are covered by gate spacers, in accordance with some embodiments. More specifically, gate spacers including a first spacer layer 120 and a second spacer layer 122 are formed to cover opposite sides of the corresponding gate stacks and the corresponding insulating capping layers 150 a″, 150 b″, 150 c″, and 150 d″. In some embodiments, gate spacers protrude above the upper surface of the corresponding conductive capping layer 138 or the insulating material 133, and have upper surfaces that are substantially level with the upper surface of insulating capping layers 150 a″, 150 b″, 150 c″, and 150 d″.

As a result, the insulating capping layer 150 a″ is separated from the insulating layer 126 and the contact structure 158 a by the gate spacers in the gate structure 137 a. Similarly, the insulating capping layer 150 b″ is separated from the contact structure 158 a and the contact structure 158 b by the gate spacers in the gate structure 137 b. The insulating capping layer 150 c″ is separated from the contact structure 158 b and the insulating layer 126 by the gate spacers in the insulating gate-cut structure 137 c′. The insulating capping layer 150 d″ is separated from the insulating layer 126 by the gate spacers in the insulating gate-cut structure 137 d.

Embodiments of semiconductor device structures and methods for forming the same are provided. The formation of the semiconductor device structure includes forming an insulating capping layer over a gate stack. Afterwards, a source/drain contact structure is formed to protrude above the gate stack. Afterwards, first and second via structures with different vertical heights are respectively formed and electrically connected to the gate stack and the source/drain contact structure. The source/drain contact structure provides a maximum critical dimensional (CD) compared to a non-self-aligned contact structure. Since the source/drain contact structure is higher than the gate structure, the vertical height of the second via structure can be reduced with respect to the first via structure. As a result, the resistances of the via structure and the underlying contact structure for the source/drain region can be reduced, thereby improving the device performance.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a conductive gate stack formed over a substrate. The semiconductor device structure also includes first gate spacer is formed adjacent to a sidewall of the conductive gate stack. The semiconductor device structure further includes source/drain contact structure is formed adjacent to the first gate spacer. In addition, the semiconductor device structure includes an insulating capping layer that covers and is in direct contact with an upper surface of the conductive gate stack. A top width of the insulating capping layer is substantially equal to a top width of the conductive gate stack. The insulating capping layer is separated from the source/drain contact structure by the first gate spacer.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a gate stack formed over a substrate and including a gate electrode layer, a conductive capping layer formed over the gate electrode layer, and an insulating capping layer formed over the conductive capping layer. A sidewall of the insulating capping layer is substantially and vertically aligned with a sidewall of the conductive capping layer and a sidewall of the gate electrode layer. The semiconductor device structure also includes a gate dielectric layer formed on a sidewall and a bottom of the gate electrode layer. The semiconductor device structure further includes a gate spacer structure formed adjacent the gate dielectric layer. In addition, the semiconductor device structure includes a first via structure passing through the insulating capping layer and in direct contact with the conductive capping layer, and a second via structure electrically connected to a source/drain feature in the substrate. A lower surface of the second via structure is substantially level with an upper surface of the gate spacer structure and an upper surface of the insulating capping layer.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a contact structure formed over a substrate and having a first sidewall and a second sidewall opposite to the first sidewall. The semiconductor device structure also includes a gate structure formed adjacent to the first sidewall of the contact structure and including a conductive gate stack and a first gate dielectric layer covering the conductive gate stack. The semiconductor device structure further includes a gate-cut structure formed adjacent to the second sidewall of the contact structure and including an insulating material and a second gate dielectric layer covering the insulating material. In addition, the semiconductor device structure includes a first insulating capping layer that covers and is in direct contact with an upper surface of the conductive gate stack. A top width of the first insulating capping layer is substantially equal to a top width of the conductive gate stack. The semiconductor device structure also includes a second insulating capping layer covering and in direct contact with an upper surface of the insulating material. A top width of the second insulating capping layer is substantially equal to a top width of the insulating material.

The fins described above may be patterned by any suitable method. For example, the fins may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. Generally, double-patterning or multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process. For example, in one embodiment, a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the fins.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A semiconductor device structure, comprising: a conductive gate stack formed over a substrate; a first gate spacer formed adjacent to a sidewall of the conductive gate stack; a source/drain contact structure formed adjacent to the first gate spacer; and an insulating capping layer covering and in direct contact with an upper surface of the conductive gate stack, wherein a top width of the insulating capping layer is substantially equal to a top width of the conductive gate stack, and wherein the insulating capping layer is separated from the source/drain contact structure by the first gate spacer.
 2. The semiconductor device structure as claimed in claim 1, wherein an upper surface of the source/drain contact structure is substantially level with an upper surface of the first gate spacer and an upper surface of the insulating capping layer.
 3. The semiconductor device structure as claimed in claim 1, further comprising: a gate dielectric layer separated the sidewall of the conductive gate stack from the first gate spacer; and a second gate spacer formed between the first gate spacer and the source/drain contact structure.
 4. The semiconductor device structure as claimed in claim 3, wherein an upper surface of the source/drain contact structure is substantially level with an upper surface of the first gate spacer, an upper surface of the second gate spacer, and an upper surface of the insulating capping layer.
 5. The semiconductor device structure as claimed in claim 3, wherein the second gate spacer is in direct contact with the source/drain contact structure and the first gate spacer.
 6. The semiconductor device structure as claimed in claim 1, further comprising: a first via structure above and electrically connected to the conductive gate stack; and a second via structure above and electrically connected to the source/drain contact structure.
 7. The semiconductor device structure as claimed in claim 6, wherein a vertical height of the first via structure is higher than a height of the second via structure.
 8. The semiconductor device structure as claimed in claim 1, wherein the conductive gate stack comprises: a first conductive layer; and a second conductive layer between the first conductive layer and the insulating capping layer.
 9. A semiconductor device structure, comprising: a gate stack formed over a substrate, comprising: a gate electrode layer; a conductive capping layer formed over the gate electrode layer; and an insulating capping layer formed over the conductive capping layer, wherein a sidewall of the insulating capping layer is substantially and vertically aligned with a sidewall of the conductive capping layer and a sidewall of the gate electrode layer; a gate dielectric layer formed on a sidewall and a bottom of the gate electrode layer; a gate spacer structure formed adjacent the gate dielectric layer; a first via structure passing through the insulating capping layer and in direct contact with the conductive capping layer; and a second via structure electrically connected to a source/drain feature in the substrate, wherein a lower surface of the second via structure is substantially level with an upper surface of the gate spacer structure and an upper surface of the insulating capping layer.
 10. The semiconductor device structure as claimed in claim 9, wherein an upper surface of the gate dielectric layer is substantially level with the upper surface of the gate spacer structure.
 11. The semiconductor device structure as claimed in claim 9, further comprising: an contact structure electrically connected between the second via structure and the source/drain feature.
 12. The semiconductor device structure as claimed in claim 11, wherein the upper surface of the contact structure is at a level higher than that of an upper surface of the conductive capping layer.
 13. The semiconductor device structure as claimed in claim 11, wherein the gate spacer structure comprises: a first gate spacer in direct contact with the gate dielectric layer; and a second gate spacer in direct contact with the first gate spacer and the contact structure.
 14. The semiconductor device structure as claimed in claim 9, wherein the conductive capping layer has a width that is substantially equal to a bottom width and a top width of the insulating capping layer.
 15. The semiconductor device structure as claimed in claim 14, wherein the conductive capping layer is in direct contact with the insulating capping layer.
 16. A semiconductor device structure, comprising; a contact structure formed over a substrate and having a first sidewall and a second sidewall opposite to the first sidewall; a gate structure formed adjacent to the first sidewall of the contact structure and comprising a conductive gate stack and a first gate dielectric layer covering the conductive gate stack; a gate-cut structure formed adjacent to the second sidewall of the contact structure and comprising an insulating material and a second gate dielectric layer covering the insulating material; a first insulating capping layer covering and in direct contact with an upper surface of the conductive gate stack, wherein a top width of the first insulating capping layer is substantially equal to a top width of the conductive gate stack; and a second insulating capping layer covering and in direct contact with an upper surface of the insulating material, wherein a top width of the second insulating capping layer is substantially equal to a top width of the insulating material.
 17. The semiconductor device structure as claimed in claim 16, further comprising: a via structure capping the contact structure, the gate structures and the gate-cut structure.
 18. The semiconductor device structure as claimed in claim 16, wherein an upper surface of the first gate dielectric layer is substantially level with an upper surface of the first insulating capping layer and an upper surface of the second gate dielectric layer is substantially level with an upper surface of the second insulating capping layer.
 19. The semiconductor device structure as claimed in claim 16, wherein the conductive gate stack comprises: a gate electrode layer; and a conductive capping layer between the gate electrode layer and the first insulating capping layer.
 20. The semiconductor device structure as claimed in claim 19, wherein the conductive capping layer is in direct contact with the first insulating capping layer and separated from the contact structure by the first gate dielectric layer. 